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  • 专利标题:   Growing of graphene single crystals involves growing graphene on substrate by chemical vapor deposition, and introducing oxidizing gas during growth process.
  • 专利号:   CN110904502-A
  • 发明人:   LIU Z, PENG H, CHEN B, SUN L, LI Y, LIU H, WANG Y, CAI A, DING Q, ZHAO Z
  • 专利权人:   BEIJING GRAPHENE INST, UNIV PEKING
  • 国际专利分类:   C30B025/14, C30B029/02
  • 专利详细信息:   CN110904502-A 24 Mar 2020 C30B-029/02 202033 Pages: 9 Chinese
  • 申请详细信息:   CN110904502-A CN11286235 13 Dec 2019
  • 优先权号:   CN11286235

▎ 摘　　要

NOVELTY - Growing of graphene single crystals involves growing the graphene on a substrate by chemical vapor deposition, and introducing an oxidizing gas during the growth process. USE - Growing of graphene single crystals (claimed). ADVANTAGE - The method enables growing of graphene single crystals having high quality, and excellent uniformity size of the graphene domain region, electrical conductivity, thermal conductivity, and mechanical strength.