▎ 摘　　要

NOVELTY - The electrode connecting structure (100) has a graphene layer (14) that is formed on an insulating layer (12). A metal layer (18) is formed on an adhesion layer (16) that is disposed on the graphene layer. The adhesion layer comprises a metal chalcogenide based material including transition metal dichalcogenide (TMDC). USE - Electrode connecting structure for electronic device (claimed). Uses include but are not limited to transistor e.g. field effect transistor (FET), thin film transistor (TFT), binary junction transistor (BJT), and barrier transistor, diode, solar cell, photodetector, tunneling device, memory device, logic device, light-emitting device, energy storage device, and display device. ADVANTAGE - Interface characteristic between graphene layer and metal layer is improved sine adhesion layer is formed of two-dimensional material between graphene layer and metal layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows the cross sectional view of the electrode connecting structure. Insulating layer (12) Graphene layer (14) Adhesion layer (16) Metal layer (18) Electrode connecting structure (100)