▎ 摘　　要

NOVELTY - The transistor has a substrate arranged with an upper surface of an oxidation silicon isolation layer that is arranged with an oxidation silicon groove. The oxidation silicon groove is connected with a grade electrode that is connected with a medium grade. The silicon oxidation groove part is arranged with a graphene and black phosphorus layer that is arranged with a source electrode. The source electrode is connected with a leakage electrode that is arranged with the graphite and black phosphorus layer. The grate electrode is made of polycrystalline silicon material. USE - Silicon grade graphene and black phosphorus transistor. ADVANTAGE - The transistor is easy to control, and has wide range of applications, and increases semiconductor silicon processing efficiency, grade medium quality and graphene and black phosphorus film performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a silicon grade graphene and black phosphorus transistor preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a silicon grade graphene and black phosphorus transistor.