▎ 摘　　要

NOVELTY - The method involves growing a graphene on a metal base material under plasma condition to obtain a metal substrate. The metal substrate of the graphene is hot-pressed. Graphene growth and hot press and forming is completed with a chamber, where thickness of the metal base material is measured about 9-100 microns, used growth carbon source is gaseous carbon source, auxiliary gas comprises hydrogen or inert gas or mixture of the hydrogen and inert gas, graphene of the growth is 350-600 degrees Celsius and frequency of a plasma is measured about 13.56MHz. USE - Method for performing plasma-preparation of a high-conductivity graphene metal composite material for use in electric appliance and electronic fields. Uses include but are not limited to computer and information technology, high electronic component, high integrated circuit and compact installation direction change. ADVANTAGE - The method enables accelerating the catalytic carbon source and cracking the catalytic carbon source by the plasma generator, promoting graphene-layer nucleation and growth, and accelerating collision frequency between the growth carbon source molecules by plasma generated by the plasma generator, so as to reduce temperature needed by the growth of the graphene, accelerate speed of the growth, thus quickly adsorbing and nucleating graphene by carbon-containing intermediate decomposition, and increasing number of graphene. The method enables solving pure copper as base material, producing the copper graphene based layered composite material, so that layer number of the graphite composite material in the alkene is single layer, and the electrochemical performance of the copper is limited. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a device for performing plasma-preparation of a high-conductivity graphene metal composite material. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a device for performing plasma-preparation of a high-conductivity graphene metal composite material. Sample feeding chamber (1) Plasma auxiliary decomposition chamber (2) Hot pressing chamber (3) Sample outlet chamber (4) Metal base material (5) Vacuum-pumping mechanism (6) Auxiliary gas gas path mechanism (7) Carbon source gas path (8) Flow valve (9) Feeding roller (11) Plasma generator (21) First heating mechanism (22) Guide roller (23) Roller press (31) Pre-pressing roller (32) Second heating mechanism (33) Discharging mechanism (41) Cooling mechanism (42)