▎ 摘　　要

NOVELTY - Removing impurities involves using hot water to fumigate or multiple times to act on the oxidized graphene film of hydrogen halide reduction, making the water molecule enter into the interlayer of the graphene oxide, extruding the halogen element to the interlayer of the oxidized graphene film, fumigating or soaking for several times less than 10 hours, the content of the halogen element in the graphene oxide film is less than 0.1 wt.%. USE - Method for removing impurities, used in hydrogen halide reduction-oxidation graphene film. ADVANTAGE - The method can quickly remove the halogen element between the graphene oxide film layer in a short time, and has high impurity-removing efficiency, has reduced 0.1 wt.% halogen element.