• 专利标题:   Semiconductor refrigerating graphene comprises ceramic substrate, where upper part of ceramic substrate provided with graphene PN junction, where PN graphene comprises left and right adjacent S end and D end.
  • 专利号:   CN114394587-A
  • 发明人:   HAO Z, DAI D, CAI X, ZHOU Y, CAI J
  • 专利权人:   GUANGDONG MORION NANOTECH CO LTD
  • 国际专利分类:   C01B032/186, C01B032/194, F25B021/02
  • 专利详细信息:   CN114394587-A 26 Apr 2022 C01B-032/186 202259 Chinese
  • 申请详细信息:   CN114394587-A CN11517983 13 Dec 2021
  • 优先权号:   CN11517983

▎ 摘  要

NOVELTY - The graphene has a heat conducting silicon grease (3), a ceramic substrate (2) whose upper portion is provided with a graphene PN junction (1). The PN graphene comprises left and right adjacent S ends (11) and D ends (12). The S end is a P-type graphene, and the D end is an N-type doped graphene. USE - Used as semiconductor refrigerating graphene. ADVANTAGE - The graphene: utilizes graphene pn junction semiconductor refrigerating sheet can quickly and uniformly radiate the heat; and has better refrigerating performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of a graphene PN junction. DESCRIPTION OF DRAWING(S) - The drawing shows a structure schematic diagram of the semiconductor refrigerating graphene. Graphene pn junction (1) Ceramic substrate (2) Heat conducting silicon grease (3) Right adjacent s end (11) D end (12)