▎ 摘　　要

NOVELTY - The method involves providing a glass substrate, where melting point of the glass substrate is more than 1100 degree Celsius. A metal thin film is formed on the glass substrate and patterned to form circuit image, where thickness of the thin film is 10nm-500nm. A graphene thin film is formed to obtain graphene composite electrode material. The glass substrate is yttrium oxide base, aluminum oxide base or silicon dioxide base glass substrate. The thin film is made of metal nickel and copper or ruthenium as target material through physical vapor deposition process. USE - Graphene composite electrode material preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene composite electrode material preparation method. '(Drawing includes non-English language text)'