▎ 摘　　要

NOVELTY - Preparing low-temperature graphene of plasma assisted sputtering of solid carbon sources comprises e.g. (i) ultrasonic cleaning of silicon substrate with acetone, ethanol and deionized water and drying with nitrogen, (ii) placing cleaned silicon substrate on magnetron, in the sputtering vacuum chamber, draining vacuum, heating the substrate, introducing high-purity hydrogen and generating in vacuum chamber and performing hydrogen plasma surface treatment of silicon substrate, (iii) sputtering nitrogen target by magnetron sputtering method, and depositing nitrogen buffer layer on the silicon substrate as metal catalyst, and (iv) sputtering carbon target on the nitrogen buffer layer by magnetron sputtering, and generating plasma by passing argon and hydrogen as a reaction gas, after sputtering, preparing layer of carbon film on nitrogen buffer layer, continuously maintaining the flow rate of argon gas and reducing the substrate temperature to room temperature under argon gas protection. USE - The method is useful for preparing low-temperature graphene of plasma assisted sputtering of solid carbon sources. ADVANTAGE - The method: produces complete high-quality graphene; is simple, controllable and economical; lowers growth temperature; and facilitates realization of large-scale graphene industry. DETAILED DESCRIPTION - Preparing low-temperature graphene of plasma assisted sputtering of solid carbon sources comprises (i) ultrasonic cleaning of silicon substrate with acetone, ethanol and deionized water and drying with nitrogen, (ii) placing cleaned silicon substrate on magnetron, in the sputtering vacuum chamber, draining vacuum to the background pressure of 1-3 x 104 Pa, then heating the substrate at 200-400 degrees C, and introducing high-purity hydrogen and generating in the vacuum chamber, and performing hydrogen plasma surface treatment of silicon substrate for 10-30 minutes, (iii) sputtering nitrogen target by a magnetron sputtering method, depositing nitrogen buffer layer having a thickness of 100-120 nm on the silicon substrate as metal catalyst, (iv) sputtering carbon target on the nitrogen buffer layer by magnetron sputtering, and generating plasma by passing argon and hydrogen as a reaction gas, where the flow rate of argon is 30-40 sccm, and the flow rate of hydrogen is 10-15 sccm, magnetron sputtering parameters as follows working pressure of 0.9-1.5 Pa, sputtering power is 200-250W, sputtering time is 15-40 minutes, after sputtering, preparing layer of carbon film on nitrogen buffer layer, continuously maintaining the flow rate of argon gas at 10-20 sccm, and reducing the substrate temperature to room temperature under argon gas protection, and (v) placing the substrate in a tubular heating furnace, vacuumizing under 1-4x 103 Pa, introducing argon gas as a protective gas, increasing the temperature of the substrate to 500-600 degrees C, maintaining the constant temperature for 30-60 minutes, then continue to supply argon gas to maintain the substrate in argon gas, reducing the temperature to room temperature and the cooling at rate of 20-45 degrees C/second.