▎ 摘　　要

NOVELTY - The method involves calculating the thickness of the graphene layer (120) by using a predefined formula relating the effective attenuation length, the detection angle and the signal strength of photoelectron beam emitted from bulk type graphene, the signal strength of the photoelectron beam emitted from bulk type silicon, the signal strength of the photoelectron beam emitted from the graphene layer, the signal intensity of the photoelectron beam emitted from a silicon substrate (110) and the signal intensity of the photoelectron beam emitted from the substrate. The effective attenuation length is obtained from a linear relationship between a measurement result by a transmission electron microscope and a measurement result by the X-ray photoelectron spectroscopy. The bulk type graphene has a thickness of 10 nm or more. An interface layer (130) formed between the graphene layer grown on substrate and the substrate includes a silicon carbide, a silicon oxide and/or a silicon oxycarbide. USE - Method for measuring thickness of graphene layer directly grown on silicon substrate by using X-ray photoelectron spectroscopy (XPS). ADVANTAGE - The XPS is used to utilize the ratio of the signal strength of the photoelectron beam emitted from the graphene layer and the signal strength of the photoelectron beam emitted from the silicon substrate. The thickness of the graphene layer grown on the silicon substrate can be calculated relatively accurately. Also, the content of silicon carbide contained in the interface layer can be measured relatively accurately. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for measuring the content of silicon carbide contained in an interface layer formed between the graphene layer grown on a silicon substrate and the silicon substrate, which involves expressing the content of the silicon carbide in the spectrum of the photoelectron beam emitted from the silicon substrate, the area of the peak of the silicon carbide, the area of the peak of the silicon oxide and the sum of the area of the peak of the silicon oxide. The interface layer is comprised of silicon carbide, silicon oxycarbide and silicon oxide. The content of the silicon carbide is expressed in the composition of the silicon carbide, the composition of the silicon carbide and the sum of the composition of the silicon oxide. The content of the silicon carbide is measured by the ratio of the composition of the silicon carbide. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the method for measuring thickness of graphene layer directly grown on silicon substrate by using XPS. (Drawing includes non-English language text) Silicon substrate (110) Graphene layer (120) Interface layer (130)