▎ 摘　　要

NOVELTY - The FinFET device (100) comprises: a fin (20) comprised of a semiconducting material; a layer (22) of gate insulation material positioned adjacent an outer surface of the fin; a gate electrode comprised of graphene and positioned on the layer of gate insulation material around a portion of the fin; and an insulating material formed on the gate electrode. The layer of gate insulation material is positioned on an upper surface and two side surfaces of the fin. The gate electrode is positioned above the upper surface and the side surfaces of the fin. USE - The FinFET device such as N-type FinFET device and P-type FinFET device, is useful in a static RAM device and a logic device. ADVANTAGE - The FinFET device can be simply and time-effectively manufactured, and has improved performance and/or no variations in the threshold voltage. DETAILED DESCRIPTION - The FinFET device (100) comprises: a fin (20) comprised of a semiconducting material; a layer (22) of gate insulation material positioned adjacent an outer surface of the fin; a gate electrode comprised of graphene and positioned on the layer of gate insulation material around a portion of the fin; and an insulating material formed on the gate electrode. The layer of gate insulation material is positioned on an upper surface and two side surfaces of the fin. The gate electrode is positioned above the upper surface and the side surfaces of the fin. The device further comprises a conductive contact positioned in the layer of insulating material that is conductively coupled to the gate electrode. An INDEPENDENT CLAIM is included for a method for forming a FinFET device. DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross sectional view of a method for forming a FinFET device with a gate electrode comprised of graphene. Substrate (10) Patterned mask layer (16) Fin (20) Layer of gate insulation material (22) FinFET device. (100)