▎ 摘　　要

NOVELTY - The apparatus has a photodetecting structure formed with photon sensing layers of graphene. An integrated graphene field effect transistor (FET) is functioned as a pre-amplifier for the photodetecting structure, where the graphene FET is vertically integrated to the photodetecting structure. The photodetecting structure converts photons into an electrical signal. The pre-amplifier amplifies the electrical signal. A graphene nanoribbon is provided as a channel of the graphene FET. The pre-amplifier is arranged above the photon sensing layers in a stacked structure. USE - Photon sensing apparatus e.g. image sensor such as complementary metal oxide semiconductor (CMOS) sensor and charge coupled device (CCD) sensor, for use in a black and white image system and color image system i.e. red-blue-green (RGB) coded system (all claimed) i.e. camera such as digital storage camera, mobile phone camera and security camera, and hand-held mobile communication device i.e. mobile phone. ADVANTAGE - The apparatus effectively absorbs photons in visible, infrared and UV frequencies. The apparatus comprises the graphene FET implemented in an amplifier layer and a reset transistor integrated into the amplifier layer to reset generated charge when required. The apparatus includes a graphene-based photodetector with a pre-amplifier in pixel area, so that the sequence of a photodetecting structure and an amplifier layer is repeated in vertical direction in the photodetector, thus detecting each color of the color system. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for sensing photons. DESCRIPTION OF DRAWING(S) - The drawing shows a top view of a graphene-based photodetector with a pre-amplifier. Graphene FET channel (104) Control electronics (105) Detector's source (106) Drain electrodes (107) Reset transistor (108)