▎ 摘　　要

NOVELTY - Preparation of single-atom layer graphene film comprises placing silicon carbide substrate in reaction chamber of atom layer depositing apparatus, aerating diazomethane to reaction chamber of atom layer depositing apparatus, performing chemical absorption on surface of silicon carbide substrate, processing halogenation between diazomethane and aerated gas iodine simple substance to form instable carbon-iodine key, and irradiating carbon-iodine key by light to break to form single-atom layer graphene film on silicon carbide substrate. USE - Method of preparation of single-atom layer graphene film (claimed). ADVANTAGE - The prepared graphene film has more uniform thickness, more complete structure and more excellent performances.