▎ 摘　　要

NOVELTY - The method involves forming an ohmic contact on a silicon carbide substrate (103). A graphene layer (102) is formed on the silicon carbide substrate, and a metal layer (101) is formed on the formed graphene layer. The silicon carbide substrate is heavily doped. The graphene layer is formed on an upper surface of a copper foil. A top surface of the formed graphene layer is coated with methyl methacrylate, and the copper foil is removed. The Poly(methyl methacrylate)-coated graphene layer is transferred onto the silicon carbide substrate, and the coated poly(methyl methacrylate) is removed. USE - Method for manufacturing semiconductor (claimed) for forming ohmic contact on silicon carbide substrate, for use in power semiconductor device such as thyristor, MOSFET, insulated gate bipolar transistor and silicon-based power semiconductor devices used in various fields such as industry, home appliances and communication. ADVANTAGE - The ohmic contact is sufficiently formed on the silicon carbide substrate without annealing or performing anannealing process at a low temperature or at a high temperature. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the silicon carbide semiconductor forming an ohmic contact. Silicon carbide semiconductor (100) Metal layer (101) Graphene layer (102) Silicon carbide substrate (103)