▎ 摘　　要

NOVELTY - The electronic device (10) has a semiconductor layer (30) that includes an area (40). The semiconductor layer have a constant doping density in overall or the area includes at least one of a doping density that is less than or equal to 1019 cm3, and a depletion width of less than or equal to 3 nm. A graphene (50) directly contacts the area of the semiconductor layer, and a metal layer (70) on the graphene. The area of the semiconductor layer includes the depletion width of less than or equal to 3 nm. The semiconductor layer is a semiconductor substrate. USE - Electronic device e.g. field effect transistor (FET) (claimed). ADVANTAGE - Since the FET can be miniaturized, the driving voltage due to a decrease in a contact resistance and the size of an electrode area is due to the decrease in the contact resistance are reduced. Since high-density doping or the source area and the drain area is not necessary to lower a schottky energy barrier even though size of device is miniaturized, the occurrence of a short channel effect by which a channel is not properly formed because doping portions of the source area and the drain area meet each other is reduced effectively. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the electronic device. Electronic device (10) Semiconductor layer (30) Area (40) Graphene (50) Metal layer (70)