▎ 摘　　要

NOVELTY - The device has a device main body provided with a flexible substrate, a back grate electrode layer, a metal oxide back grate medium layer and graphite electric conduction channel. The graphite electric conduction channel is mounted between a metal source electrode and a leakage metal electrode. The metal source electrode and the leakage metal electrode are covered with the back grate medium layer and an organic ferroelectric top grate medium layer. A top part of the grate electrode layer is arranged on a top part of the grate medium layer. USE - Organic Ferro-electric grate graphene flexible storing device. ADVANTAGE - The device can realize ferroelectric-type non-volatile data storage and organic ferroelectric material self-film-forming characteristics under low-temperature so as to produce graphene material through the channel and improve electrical performance of the device main body. The device is simple to manufacture, and has inexpensive. DETAILED DESCRIPTION - The back grate medium layer is provided Hafnium Oxide Powder, titanium dioxide or aluminum metal oxide. The back grate electrode is made of Indium tin oxide, chromium, gold or titanium material. The back grate medium layer is made of organic ferroelectric material or polyvinylidene fluoride or polytrifluoride ethylene copolymer. An INDEPENDENT CLAIM is also included for an organic Ferro-electric grate graphene flexible storing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an organic Ferro-electric grate graphene flexible storing device.