▎ 摘　　要

NOVELTY - A clean copper sheet is placed into a chemical vapor-deposition furnace and then poly(methyl methacrylate) is spin-coated on contact surface of methane gas with copper sheet. The obtained copper sheet is placed in a solution of ferric chloride including silicon chips after 30 minutes, and washing film with acetone to obtain long graphene formed on silicon. Then, gold, copper, aluminum, titanium and other metals are deposited on obtained graphene to deposition thickness of 1-5 nm, annealed at 100-500 degrees C for 24 hours in vacuum annealing furnace, cooled, to obtain metallic graphene. USE - Preparation of metallic graphene (claimed). ADVANTAGE - The method efficiently and economically provides metallic graphene with single layer and excellent metallicity. DETAILED DESCRIPTION - A clean copper sheet is placed into a chemical vapor-deposition furnace and hydrogen gas is supplied to the furnace at flow rate of 40 ml/minute. Then, chemical vapor-deposition furnace is heated to 1000 degrees C or less after supplying methane gas at flow rate of 60 mL/minute. After 15 minutes, the methane gas supply is terminated, and the chemical vapor-deposition furnace is cooled to room temperature. The copper sheet is removed, then poly(methyl methacrylate) is spin-coated on the contact surface of methane gas with copper sheet. The obtained copper sheet is placed in a solution of ferric chloride including silicon chips after 30 minutes, and washing the film with acetone to obtain long graphene formed on silicon. Then, gold, copper, aluminum, titanium and other metals are deposited on the obtained graphene to deposition thickness of 1-5 nm, annealed at 100-500 degrees C for 24 hours in vacuum annealing furnace, cooled to room temperature, to obtain metallic graphene.