▎ 摘　　要

NOVELTY - Semiconductor device comprises a substrate (101, a first pad positioned above the substrate, and a first redistribution structure comprising a first redistribution conductive layer positioned on the first pad and a first redistribution thermal release layer positioned on the first redistribution conductive layer, where the first redistribution thermal release layer is configured to sustain a thermal resistance between 0.04-0.25 degreesC cm2/Watt. USE - Semiconductor device (claimed), for use in a variety of electronic applications, such as personal computers, cellular telephones, digital cameras, and other electronic equipment ADVANTAGE - The device has improved quality, yield, performance, reliability, and reduced complexity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for fabricating a semiconductor device, which involves providing a substrate, forming a first pad above the substrate, forming a first redistribution conductive layer on the first pad, and forming a first redistribution thermal release layer on the first redistribution conductive layer, where the first redistribution conductive layer and the first redistribution thermal release layer together form a first redistribution structure and the first redistribution thermal release layer is configured to sustain a thermal resistance between 0.04-0.25 degreesC cm2/Watt. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of the method. Substrate (101) Interconnection layer (103) Device elements (105) First conductive pattern (107) Bottom passivation layer (111)