▎ 摘　　要

NOVELTY - The method involves spin-coating zirconium oxide precursor solution containing graphene quantum dots on the surface of the dielectric layer of the indium-gallium oxide gate, drying, annealing to form a graphene quantum dot-indium-Gallium oxide active layer, and preparing a source electrode and a drain electrode by using a mask plate on the graphene quantum doped quantum dots of the quantum dots to prepare the source and drain electrodes. The zirconium oxide precursor solution is obtained by adding zirconium salt into the solvent and stirring fully. USE - Method for preparation of quantum dot graphene indium gallium oxide thin film transistor (claimed). ADVANTAGE - The quantum graphene doped indium gallium oxide thin film transistor has improved performance, and excellent illumination stability, and provides convenience for the application in the photoelectric sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation illustrating the method for preparation of quantum dot graphene indium gallium oxide thin film transistor. (Drawing includes non-English language text).