• 专利标题:   Logic gate device for optoelectronic system, has interface contact arranged to output sum current that comprises first and second current components, where sum current encodes logic output state of logic output of device.
  • 专利号:   EP4187790-A1, US2023170906-A1
  • 发明人:   BOOLAKEE T, HOMMELHOFF P, HEIDE C
  • 专利权人:   UNIV ERLANGENNUERNBERG, UNIV ERLANGENNUERNBERG
  • 国际专利分类:   H03K019/14, H03K019/20, G02F003/00, H03K019/0175
  • 专利详细信息:   EP4187790-A1 31 May 2023 H03K-019/14 202345 Pages: 29 English
  • 申请详细信息:   EP4187790-A1 EP210695 26 Nov 2021
  • 优先权号:   EP210695

▎ 摘  要

NOVELTY - The device has a probe structure (110) e.g. graphene structure, with an interface contact (120), and two logic inputs for receiving two light pulses (212, 222) having two carrier-envelope phases that encode two input states of the logic inputs, respectively. The probe structure is arranged to be irradiated by the light pulses in two interaction regions (130, 132) to generate two current components within the probe structure that depends on the carrier-envelope phases. The interface contact outputs sum current that comprises the current components, where the sum current encodes logic output state of a logic output (152) the device. USE - Logic gate device for use in an optoelectronic system (claimed). ADVANTAGE - The device performs simultaneous conversion of information encoded in the carrier-envelope phases of the light pulses into electric currents and execution of gate operation, thus providing speed up compared to electronic devices. The device provides a logic gate in which electric current and information are ultimately processed at frequency of electric field of the input light pulses. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: an optoelectronic system a method for implementing a logic gate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a logic gate device. 110Probe structure 120, 122Interface contacts 130, 132Interaction regions 152Logic output 212, 222Light pulses