▎ 摘　　要

NOVELTY - Formation of graphene film involves performing reduction process (a) by heating a metal film in a atmosphere containing hydrogen gas, carrying out graphene film growth process (b) by heating the heat-treated metal film in a mixed gas atmosphere containing ethylene gas and hydrogen gas, and cooling (C) heat-treated metal film. The content of ethylene gas is 10-100 ppm with respect to hydrogen gas in the mixed gas atmosphere. USE - Formation of graphene film. Uses include but are not limited to electronic material, semiconductor thin film, electrode material, transparent conductive film, electronic device and energy device. ADVANTAGE - The method enables formation of graphene film having excellent quality, in-plane uniformity and reproducibility, and reduced damage. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of formation of graphene film. (Drawing includes non-English language text) Reduction process (a) Graphene film growth process (b) Cooling (c)