• 专利标题:   Phosphate ion-doped tin sulfide crystal/nitrogen-doped reduced graphene oxide composite material useful as cathode for sodium ion battery material, comprises nitrogen-doped rGO nanosheets and phosphate ion-doped SnS nanosheets deposited on surface.
  • 专利号:   CN114899365-A
  • 发明人:   WANG S, WANG Y, LI L
  • 专利权人:   UNIV NORTHEASTERN
  • 国际专利分类:   B82Y030/00, H01M010/054, H01M004/36, H01M004/58, H01M004/583, H01M004/62
  • 专利详细信息:   CN114899365-A 12 Aug 2022 H01M-004/36 202282 Chinese
  • 申请详细信息:   CN114899365-A CN10194106 01 Mar 2022
  • 优先权号:   CN10194106

▎ 摘  要

NOVELTY - Phosphate ion-doped SnS (Tin sulfide) crystal/nitrogen-doped rGO (reduced graphene oxide) composite material comprises nitrogen-doped rGO nanosheets and phosphate ion-doped SnS nanosheets deposited on surface. The doped SnS crystal has a SnS crystal structure, PO43- (orthophosphate) is embedded between the SnS lattice layers, and Sn is bonded to O, O and P through covalent bonds. USE - The material is useful as cathode for sodium ion battery material (claimed). ADVANTAGE - The material utilizes phytic acid to be implanted into the SnS lattice, achieves a significant improvement in the intrinsic electronic conductivity of SnS, and alleviates the volume expansion problem caused by the insertion/extraction of Na ions in SnS crystals. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the composite material.