▎ 摘　　要

NOVELTY - The FET has a metal source electrode and a metal drain electrode that are fixed on a substrate surface. A gap is formed between the metal source and drain electrodes. A graphene channel layer is formed on a graphene channel layer lap joint and matched with the gap. A top gate electrode is arranged between bottom and upper surfaces of the channel layer. The top gate electrode and a bottom gate electrode are coated with high dielectric constant material that is selected from one of aluminum oxide (Al203), hafnium oxide (HfO2), lanthanum oxide (La2O5) and aluminum nitride (AlN). USE - Graphene FET. ADVANTAGE - The FET obtains the top gate electrode and the bottom gate electrode in a simple manner and realizes atom layer deposition operation so as to determine a lower part of the graphene channel layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene FET manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene FET manufacturing method.'(Drawing includes non-English language text)'