• 专利标题:   Method for manufacturing power storage device, involves heating object in vacuum so that graphene oxide layer is formed over object and current collector having projecting structure is used as electrode of storage device.
  • 专利号:   US2016149279-A1
  • 发明人:   OGINO K, SAITO Y
  • 专利权人:   SEMICONDUCTOR ENERGY LAB
  • 国际专利分类:   H01M012/08, H01M004/86, H01M004/88, H01M004/96
  • 专利详细信息:   US2016149279-A1 26 May 2016 H01M-012/08 201638 Pages: 20 English
  • 申请详细信息:   US2016149279-A1 US008491 28 Jan 2016
  • 优先权号:   JP189289

▎ 摘  要

NOVELTY - The method involves forming a first and second current collector (108,110) having a projecting structure. The catalyst layer (112) is formed comprising graphene film by immersing an object having the projecting structure and an electrode. The voltage is applied between the object and the electrode in the solution to form a graphene oxide layer. The object is heated in a vacuum or in a reducing atmosphere so that the graphene oxide layer formed over the object. The current collector having the projecting structure is an air electrode used as an electrode of the power storage device. USE - Method for manufacturing power storage device for consumer electronic devices in home and car. ADVANTAGE - The throughput is increased and reduces the cost in manufacture of the power storage device. The reliability and durability of the power storage device can be improved. The low-cost midnight power can be efficiently utilized, so that those who use the device have low electricity charges and electric power providers have leveling the amount of power supply. The power storage device can be formed to be compact and lightweight as a result of improved characteristics of the power storage device. DESCRIPTION OF DRAWING(S) - The drawing shows a structural view of a power storage device. Electrolyte solution (104) First current collector (108) Second current collector (110) Catalyst layer (112)