▎ 摘　　要

NOVELTY - Graphene net is prepared by placing copper mesh template in chemical vapor deposition chamber, then growing graphene on copper mesh for 5-15 minutes in methane and hydrogen atmosphere, and annealing; preparing polydimethylsiloxane (PDMS)-graphene net patch by flat glass sheet pressing copper mesh on PDMS surface, adding ammonium persulfate solution, and removing copper; and transferring graphene network to a silicon chip by pasting PDMS-graphene net patch on the silicon chip, heating at 80 degrees C, applying 1-2 kg of pressure for 30-40 minutes, and uncovering the PDMS-graphene net patch. USE - Method for preparing graphene network (claimed). DETAILED DESCRIPTION - Preparation of graphene net comprises: (A) preparing copper mesh of needed specification as template, placing template in constant temperature section in chemical vapor deposition chamber, sealing, vacuumizing to 10-15 Pa, introducing argon gas, heating to 950-1000 degrees C in hydrogen/argon (H2/Ar) atmosphere, and preserving heat for 30-40 minutes, then growing graphene on copper mesh for 5-15 minutes in methane and H2 atmosphere, annealing in H2/Ar atmosphere and cooling to room temperature; (B) preparing PDMS-graphene net patch by flat glass sheet pressing copper mesh on PDMS surface, adding ammonium persulfate solution, removing copper, and then washing with deionized water; and (C) transferring graphene net to a silicon chip by pasting PDMS-graphene net patch on the silicon chip, then heating at 80 degrees C, applying 1-2 kg of pressure for 30-40 minutes, and uncovering the PDMS-graphene net patch to transfer the graphene network on the silicon chip.