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  • 专利标题:   Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.
  • 专利号:   US2012326115-A1, EP2540662-A2, JP2013012736-A, KR2013006943-A, CN102856354-A, EP2540662-A3, US8927414-B2, JP6169328-B2, KR1878751-B1, EP2540662-B1, CN102856354-B
  • 发明人:   CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN FOUND CORP COLLABORATI, SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN IND ACAD COOP FOUND, SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN FOUND CORP COLLABORATI, UNIV SUNGKYUNKWAN FOUND CORP COLLABORATI, SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   B82Y040/00, B82Y099/00, H01L021/20, H01L029/12, B82B001/00, B82B003/00, H01L021/02, H01L029/06, H01L029/10, H01L029/16, H01L029/66, H01L029/775, C23C016/26, H01L021/205, H01L021/336, H01L029/786, H01L029/78, C01B031/00, C01B031/04, H01L021/04, H01L029/772, H01L021/4763, H01L023/52, B82Y010/00, C01B032/00, C01B032/186
  • 专利详细信息:   US2012326115-A1 27 Dec 2012 H01L-029/12 201303 Pages: 17 English
  • 申请详细信息:   US2012326115-A1 US470487 14 May 2012
  • 优先权号:   KR062482

▎ 摘　　要

NOVELTY - The graphene structure comprises a substrate (210), a growth layer (221), a graphene layer (241), and a protective layer (241). The growth layer is disposed on the substrate, and has a groove (250) that exposes side surfaces of a growth layer and an upper surface of the substrate. The graphene layer disposed on the side surfaces of the growth layer, and has a width of several nanometers. The protective layer disposed on an upper surface of the growth layer. The growth layer and protective layer are alternately stacked on the protective layer, and have exposed side surfaces. USE - The structure is useful in: a graphene device (claimed) such as a transistor; and various devices such as electronic devices, optical devices, sensors, capacitors and energy devices. ADVANTAGE - The graphene structure exhibits increased chemical stability and high electric conductivity. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a method for manufacturing a graphene structure; (2) a graphene device; and (3) a method for manufacturing a graphene device. DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross-sectional view of a graphene structure. Substrate (210) Growth layer (221) Protective layer (231) Graphene layer (241) Groove. (250)