▎ 摘　　要

NOVELTY - Production of graphene by depositing carbon from gaseous phase on a substrate in a reactor, involves (i) providing a substrate in the reactor, (ii) providing elevated temperature and lower pressure conditions in the reactor, (iii) evoking a flow of a gas, and (iv) depositing carbon from the gaseous phase on the substrate to form graphene. The gas comprises at least a carbon precursor gas mixed with an inter gas and optionally mixed with hydrogen. A wafer having a crystalline layer of germanium having crystallographic orientation intended for graphene deposition is used as the substrate. USE - Production of graphene used in semiconductor surfaces, arbitrary insulators, and manufacturing of integrated circuits. ADVANTAGE - The method is economical, and provides high quality, homogeneous graphene films. The substrates are highly feasible, reusable and has smoothest surface.