▎ 摘　　要

NOVELTY - The method involves uniformly mixing graphene and ethanol to obtain a sample. The sample is fixed on a rotating platform. Rotating is started. The sample is illuminated using a laser ablation. The sample is centrifugally purified. The purified sample is filtered using molecular filters to obtain graphene quantum dots solution (1). The graphene quantum dots solution is casted on a light-emitting surface (30) of a LED (3) using a drop casting method. The ethanol is evaporated by standing still. A graphene-quantum-dot-cast layer (5) is formed on the light-emitting surface of the LED. USE - Fabrication method for casting graphene quantum dots on LED i.e. nitride semiconductor LED (claimed). ADVANTAGE - The method ensures that photocarriers in the graphene-quantum-dot-cast layer generated by illumination of the LED can flow to the light-emitting surface of the LED, thus increasing carrier concentration and light-emitting quantum efficiency of the LED. The method enables enhancing light emitting efficiency of the LED. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene-quantum-dot-cast layer and a LED. Graphene quantum dots solution (1) LED (3) Graphene-quantum-dot-cast layer (5) Light-emitting surfaces (30, 302, 304)