• 专利标题:   Design and construction process of molybdenum disulfide photodiode detector sandwich structure use in optoelectronic system used in military or civil field involves cleaning silicon wafer, cutting silicon dioxide/silicon substrate into square substrate, and blowing large particle silicon slag.
  • 专利号:   CN115966626-A
  • 发明人:   LI P, ZHOU T, CAO N
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   H01L031/0224, H01L031/032, H01L031/0352, H01L031/108, H01L031/18
  • 专利详细信息:   CN115966626-A 14 Apr 2023 H01L-031/18 202343 Chinese
  • 申请详细信息:   CN115966626-A CN11149206 21 Sep 2022
  • 优先权号:   CN11149206

▎ 摘  要

NOVELTY - Designing and construction process of a sandwich-structured MoS2 photodetector array, comprises (i) cutting the silicone dioxide/silicone substrate into square substrates, placing in acetone, isopropyl alcohol and deionized water, drying with a nitrogen gun, (2) spin-coating silicon wafer with photoresist, use a UV exposure machine for photolithography and development, and electron beam evaporate titanium as an adhesive layer between silicone dioxide substrate and gold (Au) electrode, peeling the photoresist, (iii) preparing large-area molybdenum disulfide on a sapphire substrate, spin-coating it with a polystyrene (PS) solution, scratching along the edge of the sapphire, immersing in deionized water, lifting the film using the silicone dioxide/silicone substrate with patterned metal electrodes, (4) spin-coating substrate with photoresist, performing UV lithography, (5) preparing large-area graphene on a copper foil, spin-coating with a polymethyl methacrylate solution, and etching. USE - Two-dimensional photodiode detector array structure of sandwich structure design and construction process for use in optoelectronic system used in military or civil field. ADVANTAGE - The size of the gold-molybdenum disulfide-graphene sandwich structure photodiode detector position and number of controllable construction can be realized.