• 专利标题:   Transferring two-dimensional materials involves bonding the side of the growth substrate with the two-dimensional material and support layer through adhesive layer to obtain layered structure, removing growth substrate in etching solution.
  • 专利号:   CN113264522-A, CN113264522-B
  • 发明人:   LIU J, WANG H, XU Z, JIANG X
  • 专利权人:   SONGSHAN LAKE MATERIALS LAB
  • 国际专利分类:   C01B021/064, C01B025/00, C01B032/15, C01B032/194, C01B032/198, C01B035/02
  • 专利详细信息:   CN113264522-A 17 Aug 2021 C01B-032/194 202186 Pages: 17 Chinese
  • 申请详细信息:   CN113264522-A CN10689750 21 Jun 2021
  • 优先权号:   CN10689750

▎ 摘  要

NOVELTY - Transferring two-dimensional materials involves bonding the side of the growth substrate with the two-dimensional material and the support layer through an adhesive layer to obtain a layered structure, removed the growth substrate in the etching solution under the condition of maintaining the fluidity of the adhesive layer to obtain a layered structure. The growth substrate is removed in the etching solution, the etching solution contains a low-boiling solvent with a boiling point lower than the curing temperature of the adhesive layer, and is heated at a temperature lower than the curing temperature of the adhesive layer to make the after the low-boiling point solvent is converted into a gaseous state to spread and eliminate the wrinkles of the two-dimensional material. USE - Method for transferring two-dimensional materials. ADVANTAGE - The method does nothave adhesive layer pollution, realizes the two-dimensional material from the growth substrate is transferred to the target substrate and reduces the two-dimensional material surface after transferring wrinkle and damage. DETAILED DESCRIPTION - Transferring two-dimensional materials involves bonding the side of the growth substrate with the two-dimensional material and the support layer through an adhesive layer to obtain a layered structure, removed the growth substrate in the etching solution under the condition of maintaining the fluidity of the adhesive layer to obtain a layered structure. The growth substrate is removed in the etching solution, the etching solution contains a low-boiling solvent with a boiling point lower than the curing temperature of the adhesive layer, and is heated at a temperature lower than the curing temperature of the adhesive layer to make the after the low-boiling point solvent is converted into a gaseous state to spread and eliminate the wrinkles of the two-dimensional material, the side of the two-dimensional material away from the support layer is combined with the target substrate to obtain a layered structure. The support layer and the glue layer are removed to obtain a layered structure target substrate/two-dimensional material, so as to realize the transfer of the two-dimensional material from the growth substrate to product.