▎ 摘　　要

NOVELTY - Producing hexagonal boron nitride (h-BN) thin film comprises (a) forming a graphene layer or a graphene oxide layer (20) on a substrate (10); and (b) forming h-BN thin film (30) on the graphene layer or the graphene oxide layer by supplying boron-containing precursor and nitrogen-containing precursor, and heat treating by organometallic chemical vapor deposition (MOCVD) method. USE - The method is useful in producing h-BN thin film for photoelectric device (claimed), light-emitting and light-receiving device. ADVANTAGE - The method produces high-quality h-BN thin film by reducing crystal defects in the h-BN thin film caused by difference in lattice constant from substrate, and has excellent mechanical and chemical stability and energy band gap of 6.5 eV. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for photoelectric device comprising h-BN thin film produced by the above method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the h-BN thin film formed on substrate. Substrate (10) Graphene layer or graphene oxide layer (20) Hexagonal boron nitride thin film (30)