▎ 摘　　要

NOVELTY - The method involves forming a catalyst layer on a first substrate (110). A thin metal film is deposited on a catalyst layer (120) and nucleated to form nanoparticles at an annealing temperature of between 300 degrees C and 1,100 degrees C. A graphene layer is deposited with nanoparticles to form a layer of graphene and nanoparticles at a temperature of between of 700 degrees C and 1,100 degrees C. The layer of graphene and nanoparticles (130) is removed. The layer of graphene and nanoparticles is transferred to another substrate. The nanoparticles provide a passivation site for allowing the graphene deposition and creating a defective structure on the layer of graphene and nano particles. USE - Method of transferring layer of graphene with nanoparticles to another substrate. ADVANTAGE - The improvement method of transferring a layer of graphene with nanoparticles to another substrate particularly, the metal layer is altered to form small nanoparticles during the graphene growth process is provided, which allows the exposed area for the graphene growth impeded to limit the continuous structure growth of the graphene, forming a defective region in the graphene structure. The method of provides a considerable reduction of materials with even greater efficiency and economically during operation. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram for formation of nanoparticles with defects on graphene layer during chemical vapor deposition (CVD) process. First substrate (110) Catalyst layer (120) Layer of graphene and nanoparticles (130)