▎ 摘　　要

NOVELTY - Method for controllable growing of 2-dimensional semiconductor film involves (a) dissolving excess metal precursor in supercritical carbon dioxide to reach saturation state, (b) introducing supercritical carbon dioxide containing metal precursor, (c) introducing the supercritical carbon dioxide into a nuclear reaction zone at 40-80 degrees C and a pressure of 20-80 MPa, (d) growing a seed crystal on a carrier, (e) heating the carrier in a pressure-releasing nucleation reaction area, introducing the supercritical carbon dioxide and growing film, (f) introducing the supercritical carbon dioxide into the pressure releasing nucleation reaction area for recoiling, (g) adding non-metal precursors, (h) introducing the supercritical carbon dioxide into the pressure relief nucleation reaction zone for recoil, (i) relieving the pressure to generate a periodic film, and (j) repeating the steps (a)-(h) and forming film to obtain the product. USE - The method is useful for controllable growing of 2-dimensional semiconductor film by supercritical carbon dioxide pulse. ADVANTAGE - The method increases concentration of precursor, reduces growth temperature, environmental pollution and dosage of the precursor, improves growth efficiency, solves the problem that the chemical vapor deposition method has high reaction temperature, uncontrollable film quality and low thin film forming efficiency, and is economical.