▎ 摘　　要

NOVELTY - A substrate is placed in a chemical vapor deposition chamber and heated to less than 600 degrees C. A carbon precursor is flown into the chamber in order to deposit graphene on the substrate. The graphene precursor contains acetylene. An underlayer comprising cobalt or nickel is further deposited on the substrate before heating. USE - Method for depositing graphene on substrate for semiconductor device (claimed). ADVANTAGE - The graphene has low and stable resistivity at small line width, and can be deposited at low temperature. DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of the field effect transistor. Source (205) Gate (210) Drain (215) Graphene connect (220) High resistivity silicon (250)