• 专利标题:   Graphene humidity sensor for measuring humidity by humidity sensitive material, has silicon dioxide/silicon substrate formed with plasma modified graphene layer whose two ends are provided with two parallel metal electrodes, where graphene is formed as single layer or multi-layers of graphene.
  • 专利号:   CN114755273-A
  • 发明人:   WANG W, BAI L, NI Z
  • 专利权人:   UNIV SOUTHEAST
  • 国际专利分类:   C01B032/194, G01N027/12
  • 专利详细信息:   CN114755273-A 15 Jul 2022 G01N-027/12 202274 Chinese
  • 申请详细信息:   CN114755273-A CN10527249 13 May 2022
  • 优先权号:   CN10527249

▎ 摘  要

NOVELTY - The sensor has a silicon dioxide (SiO2)/silicon (Si) substrate (1) formed with a plasma modified graphene layer (2). Two ends of the plasma modified graphene layer are provided with two parallel metal electrodes (3). The plasma modified graphene layer is formed as a single layer or multi-layers of graphene, and plasma includes oxygen plasma and argon plasma, where voltage is applied to the two ends of the plasma modified graphene layer for measuring electrical signal changes under different humidity conditions and comparing resistance of graphene to obtain humidity and response time information. USE - Graphene humidity sensor for measuring humidity by humidity sensitive material. Uses include but are not limited to food health care, environment monitoring, industrial and agricultural production fields. ADVANTAGE - The sensor has quick response speed and high sensitivity, and can realize miniaturization and integration effects. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for forming a graphene humidity sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene humidity sensor. 1Silicon dioxide/silicon substrate 2Plasma modified graphene layer 3Parallel metal electrodes