• 专利标题:   Sapphire with wider dielectric constant adjusting range is obtained from aluminum oxide and graphene.
  • 专利号:   CN110528076-A
  • 发明人:   CHENG G, LU T, QI J, HUANG X, WEI N, SHI Y
  • 专利权人:   UNIV SICHUAN
  • 国际专利分类:   C30B015/04, C30B029/20
  • 专利详细信息:   CN110528076-A 03 Dec 2019 C30B-029/20 201997 Pages: 5 Chinese
  • 申请详细信息:   CN110528076-A CN10948613 08 Oct 2019
  • 优先权号:   CN10948613

▎ 摘  要

NOVELTY - Sapphire is obtained from aluminum oxide and graphene. USE - Used as sapphire obtained from aluminum oxide and graphene. ADVANTAGE - The graphene doped sapphire material has better high temperature strength, wider dielectric constant adjusting range, less dielectric loss and good microwave window. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for generating graphene doped sapphire comprising (1) mixing the aluminum oxide powder and graphene powder uniformly to obtain mixed material A, (2) mixing graphene powder and potassium fluoride powder uniformly to obtain mixed material B, (3) adding the mixed material A dry pressing and sintering into cake material, (4) adding the cake material into the crystal growth device, placing each cake material on a layer of mixture B, (5) heating chemical material into solution under vacuum state, insulating, reducing the power, stirring to impurity layer disappears, (6) seeding, (7) growing crystal and (8) annealing, naturally cooling, opening the furnace and taking crystal.