• 专利标题:   Manufacturing graphene-metal chalcogenide hybrid film involves forming the metallic foil on the graphene layer, and then supplying the chalcogen containing gas on the metallic foil.
  • 专利号:   KR2015139217-A
  • 发明人:   CHOI M
  • 专利权人:   LG ELECTRONICS INC
  • 国际专利分类:   H01L021/20, H01L021/324, H01L029/872
  • 专利详细信息:   KR2015139217-A 11 Dec 2015 H01L-021/20 201611 Pages: 14 English
  • 申请详细信息:   KR2015139217-A KR067480 03 Jun 2014
  • 优先权号:   KR067480

▎ 摘  要

NOVELTY - Manufacturing graphene-metal chalcogenide hybrid film involves forming the metallic foil on the graphene layer, and then supplying the chalcogen containing gas on the metallic foil. The metal chalcogenide thin film is formed on the metal catalyst. USE - Method for manufacturing graphene-metal chalcogenide hybrid film (claimed). ADVANTAGE - The method enables to manufacture graphene-metal chalcogenide hybrid film with high quality and excellent interfacial property. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing Shottky barrier diode.