▎ 摘　　要

NOVELTY - Preparation of wafer-level self-supporting cadmium telluride film involves selecting two-dimensional (2D) material/sapphire substrate, cleaning the surface of 2D material/sapphire substrate, assembling 2D material/sapphire substrate and substrate heating support by molten metal material, growing cadmium telluride thin film on 2D material/sapphire substrate by molecular beam epitaxy system, peeling cadmium telluride film/2D material by thermal release tape, and heating to remove the thermal release tape. The 2D material is one of graphene, molybdenum disulfide and molybdenum ditelluride, and has a single-layer structure. The thickness of cadmium telluride thin film is 50-500 nm. The growth status of cadmium telluride thin film is monitored in real time by reflective high-energy electron diffractometer. The self-supporting cadmium telluride film is a single crystal film with size of 0.5 cm×0.5 cm to 1 cm×1 cm. USE - Preparation of wafer-level self-supporting cadmium telluride thin film used in flexible wearable silicon-based electronic device. ADVANTAGE - The method enables preparation of wafer-level self-supporting cadmium telluride thin film with excellent lattice matching between sapphire substrate and cadmium telluride thin film, and uses two-dimensional material as transition layer to prevent dangling bonds on sapphire surface bonding with the cadmium telluride thin film. DETAILED DESCRIPTION - Preparation of wafer-level self-supporting cadmium telluride film involves selecting two-dimensional (2D) material/sapphire substrate, cleaning the surface of 2D material/sapphire substrate, assembling 2D material/sapphire substrate and substrate heating support by molten metal material, growing cadmium telluride thin film on 2D material/sapphire substrate by molecular beam epitaxy system, peeling cadmium telluride film/2D material by thermal release tape, and heating to remove the thermal release tape. The 2D material is one of graphene, molybdenum disulfide and molybdenum ditelluride, and has a single-layer structure. The cadmium telluride film is grown on single-layer structure of the 2D material through the molecular beam epitaxy system, using beam source including cadmium telluride source and tellurium source with purity of at least 7 N, with equivalent pressure ratio (cadmium telluride-tellurium) of 1:0.5-0.7, heating wire temperature of 280-300℃, and growth time of 10-90 minutes. The thickness of cadmium telluride thin film is 50-500 nm. The growth status of cadmium telluride thin film is monitored in real time by reflective high-energy electron diffractometer. The self-supporting cadmium telluride film is a single crystal film with size of 0.5 cm×0.5 cm to 1 cm×1 cm. The out-of-plane crystal orientation of the film grown by the molecular beam epitaxy system is along the 111 direction. The cadmium tellurium film/two-dimensional material is peeled by adhering thermal release tape made of polydimethylsiloxane to the surface of the cadmium telluride film, squeezing out the air bubbles between the thermal release tape and the cadmium telluride film using a cotton swab until the thermal release tape and the cadmium telluride film are fully bonded, and heating at 90-110°C for 3-5 minutes.