▎ 摘　　要

NOVELTY - A graphene growing method involves placing a clean silicon substrate in a reaction chamber for a plasma enhanced atomic layer deposition cycle, where each cycle involves performing carbon source or auxiliary source adsorption and the carbon source is from a benzene series and/or methane. The auxiliary source is an oxygen-containing benzene series and a C1-C2 oxygen-containing organic substance, the adsorbed silicon substrate is cleaned to perform a plasma pulse, the silicon substrate is cleaned after the plasma pulse. USE - Method for growing a graphene on a silicon substrate. ADVANTAGE - The method enables growing graphene on a large area on a silicon substrate with better compatibility by current silicon-based semiconductor technology, promoting growth by using oxygen-containing small molecules, compensating for vacancy defects as small molecular carbon and reducing the peak D of the defect peak after the reaction and the size of the wrinkles after film formation, promoting dehydrogenation of benzene during growth by the participation of oxygen and improving the quality of graphene grown on a large area of the atomic layer on the silicon substrate.