▎ 摘　　要

NOVELTY - The method involves etching side wall of first fin portion. The second inclined angle is formed between side wall of first fin portion and semiconductor substrate (100) surface, and is less than first inclined angle. The carbon containing semiconductor layer (103) is formed on first fin portion side wall. The graphene layer (104) is formed on the surface of semiconductor layer. The fin (101) is formed across the grid electrode structure on isolation layer (200). The grid structure is set to partially cover the first fin portion side wall or top portion and graphene layer. USE - Forming method of FinFET (claimed). ADVANTAGE - By reducing the inclination of side wall fin, the quality of electro-migration capacity of graphene layer is increased so as to increase the performance of FinFET. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for FinFET. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the FinFET. Semiconductor substrate (100) Fin (101) Carbon containing semiconductor layer (103) Graphene layer (104) Isolation layer (200)