• 专利标题:   Method for forming graphite-based structure used for e.g. electronic devices, involves patterning substrate, forming elements on substrate, depositing graphene initiating layer on top surface of each element, and generating graphene.
  • 专利号:   WO2014113472-A1, US2015360954-A1, US9688540-B2, US2017309710-A1
  • 发明人:   DAVIS M A
  • 专利权人:   SOLAN LLC, DAVIS M A
  • 国际专利分类:   H01L021/02, H01L021/20, H01L029/66, C01B031/04, C01B031/00, C01B031/02, C23C014/06, C23C014/34, C23C016/04, C23C016/26, H01L021/285, H01L029/16, H01L029/41
  • 专利详细信息:   WO2014113472-A1 24 Jul 2014 H01L-021/02 201450 Pages: 97 English
  • 申请详细信息:   WO2014113472-A1 WOUS011683 15 Jan 2014
  • 优先权号:   US752961P, US14761290, US465149

▎ 摘  要

NOVELTY - A substrate is patterned, to form elements (104-1-104-2,104-N) on the substrate. Each element is separated from an adjacent element on the substrate by a corresponding trench in trenches (106-1,106-2) on the substrate. Each element has a corresponding top surface. The top surface of each element is separated from an adjacent trench surface by a side wall of the element. A graphene initiating layer is segmentedly deposited on the top surface of each element. Graphene is generated using the graphene initiating layer, to form graphite-based structure. USE - Method for forming graphite-based structure e.g. graphene quantum dots, graphene nanoribbons, graphene nanonetworks, graphene plasmonics and graphene super-lattices used for electronic devices, composite materials and energy generation and storage. ADVANTAGE - The method enables formation of graphite-based structure with controlled device fabrication, excellent spatial resolution and packing density of segmented graphene layers. DETAILED DESCRIPTION - A substrate is patterned, to form elements on the substrate. Each element is separated from an adjacent element on the substrate by a corresponding trench in trenches on the substrate. Each element has a corresponding top surface. Each trench has a trench surface, and separates a pair of adjacent elements in the elements. The top surface of each element is separated from an adjacent trench surface by a side wall of the element. Top surface of a primary element has a primary elevation. The trench surface of a primary trench has a secondary elevation. The primary elevation is other than the secondary elevation. A primary orthogonal projection of the top surface of the primary element and a secondary orthogonal projection of the trench surface of the primary trench on a common plane are contiguous or overlapping. A graphene initiating layer is segmentedly deposited on the top surface of each element. Graphene is generated using the graphene initiating layer, to form graphite-based structure. An INDEPENDENT CLAIM is included for graphite-based structure. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of graphene device topography. Patterned substrate (102) Elements (104-1-104-2,104-N) Trenches (106-1,106-2) Graphene device topography (200)