▎ 摘　　要

NOVELTY - Apparatus comprises a vacuum chamber (110), a reaction gas inlet port (150) for passing reaction gas inside of the vacuum chamber, a stage (130) provided with graphene pattern layer, and located inside to the vacuum chamber, a graphene temperature sensor for sensing temperature of the graphene pattern layer, and a power supply unit (140) for applying power to graphene pattern layer. The reaction gas flows into the vacuum chamber by opening the reaction gas inlet port when the graphene temperature is more than constant temperature. USE - The apparatus is useful for etching graphene (claimed). ADVANTAGE - The apparatus reduces energy consumption. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for etching graphene, comprising (a) forming graphene pattern layer with width of 20-30 nm, (b) providing the graphene pattern layer on the stage in a vacuum chamber, (c) applying power to the graphene pattern layer, and (d) introducing a reaction gas into the vacuum chamber when the graphene temperature is more than constant temperature. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of the apparatus for etching graphene. Graphene etching apparatus (100) Vacuum chamber (110) Stage (130) Power supply unit (140) Reaction gas inlet port (150)