▎ 摘　　要

NOVELTY - The copper substrate has first copper layer and second copper layer in contact with the first copper layer. The second copper layer has second copper percentage greater than first copper percentage of first copper layer by at least about 0.1%, second oxygen percentage less than or equal to first oxygen percentage of the first copper layer and second average thickness less than the first average thickness of the first copper layer which is at least about 3 micrometers. The second average thickness is about 25 micrometers. USE - Copper substrate for growing graphene monolayer. ADVANTAGE - Improves growth of graphene by chemical vapor deposition (CVD) on high purity copper surface with less graphene defects at low cost. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included in the following: (1) a system for manufacturing copper substrate for growing graphene; and (2) a graphene copper composition. DESCRIPTION OF DRAWING(S) - The drawing shows the conceptual view illustrating the operations in growing graphenes on high purity copper. Cleaning of low purity copper (401) Low purity copper sample (402) Laying high purity copper layer on low purity copper (403) High purity copper layer (404) Thermal annealing of high purity copper layer (405)