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  • 专利标题:   Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.
  • 专利号:   JP2014043372-A, JP5962332-B2
  • 发明人:   HAYASHI K
  • 专利权人:   DOKURITSU GYOSEI HOJIN SANGYO GIJUTSU SO, FUJITSU LTD
  • 国际专利分类:   B01J023/755, C01B031/02, C23C016/26, C30B029/02
  • 专利详细信息:   JP2014043372-A 13 Mar 2014 C30B-029/02 201421 Pages: 18 Japanese
  • 申请详细信息:   JP2014043372-A JP186289 27 Aug 2012
  • 优先权号:   JP186289

▎ 摘　　要

NOVELTY - Graphene (28) is grown by forming metal film (20) on single crystal silicon (14), reacting single crystal silicon and part of metal film and epitaxially growing metal silicide film (22) on single crystal silicon, forming single crystal metal film (26) that reflects surface orientation of metal silicide film by crystallizing metal film remaining on metal silicide film, and epitaxially growing graphene on single crystal metal film. USE - Method of growing graphene for electronic device. ADVANTAGE - Manufacturing cost of graphene can be reduced, and graphene with large area can be grown. DESCRIPTION OF DRAWING(S) - The drawings show sectional diagrams of the method of growing graphene. Single crystal silicon film (14) Metal film (20) Metal silicide film (22) Metal film (26) Graphene (28)