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  • 专利标题:   Preparing graphene comprises depositing graphene on substrate by chemical vapor deposition, and etching amorphous carbon on surface of graphene by water vapor.
  • 专利号:   CN112938946-A, CN112938946-B
  • 发明人:   LIU K, YUE X, ZHANG Z, HE M, HUANG Z, WANG E
  • 专利权人:   SONGSHAN LAKE MATERIALS LAB, ZHONGKE JINGYI DONGGUAN MATERIAL TECHNOL
  • 国际专利分类:   C01B032/186, C01B032/196
  • 专利详细信息:   CN112938946-A 11 Jun 2021 C01B-032/186 202154 Pages: 14 Chinese
  • 申请详细信息:   CN112938946-A CN10283533 16 Mar 2021
  • 优先权号:   CN10283533

▎ 摘　　要

NOVELTY - Preparing graphene comprises depositing graphene on the substrate by chemical vapor deposition, and etching the amorphous carbon on the surface of the graphene by water vapor, where the temperature of the water vapor is not less than 750 degrees C. USE - The method is useful for preparing graphene. ADVANTAGE - The method: removes the amorphous carbon on the surface of the graphene, so that the growth rate of the graphene thin film is high. The graphene: has excellent quality and high cleanliness.