• 专利标题:   Film based on black phosphorus-graphene oxide quantum dot, comprises upper layer structure, middle layer structure and lower layer structure sequentially connected together, where material of upper layer structure and lower layer structure is graphene oxide nano sheet.
  • 专利号:   CN114784186-A
  • 发明人:   DING L, SU Y, YUAN S, WEI G
  • 专利权人:   UNIV SHAANXI SCI TECHNOLOGY
  • 国际专利分类:   H01L045/00
  • 专利详细信息:   CN114784186-A 22 Jul 2022 H01L-045/00 202275 Chinese
  • 申请详细信息:   CN114784186-A CN10379776 12 Apr 2022
  • 优先权号:   CN10379776

▎ 摘  要

NOVELTY - Film based on black phosphorus-graphene oxide quantum dot, comprises an upper layer structure, a middle layer structure and a lower layer structure sequentially connected together, where the material of the upper layer structure and the lower layer structure is graphene oxide nano sheet and the material of the middle layer structure is black phosphorus graphene oxide quantum dot compound. USE - Used as film based on black phosphorus-graphene oxide quantum dot. ADVANTAGE - The film: is simple, convenient for large-area preparing two-dimensional material functional film and memristor; and provides the black phosphorus-graphene oxide quantum dot film, which has good performance, and is placed in the natural environment for 3 months, and can keep good performance; and protects the middle layer structure from the influence of oxygen and water, thus ensuring the stability of the intermediate layer structure, and the P-C key in the process of electronic transmission also has good auxiliary function, can make the electrons in the black phosphor easily transferred to the upper layer or the lower layer structure. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: preparation method of film based on black phosphorus-graphene oxide quantum dots; memristor based on black phosphorus graphene oxide quantum dot; and preparation method of memristor based on black phosphorus-graphene oxide quantum dot