▎ 摘　　要

NOVELTY - Graphene-containing structure (100) comprises a silicon carbide semiconductor layer (4), a graphene layer (3) on the silicon carbide semiconductor layer, and a first aluminum nitride layer (1) provided between the silicon carbide semiconductor layer and the graphene layer. USE - The graphene-containing structure is useful for the semiconductor device such as field effect transistor and for detection device such as a gas sensor and a light detection device. ADVANTAGE - The graphene-containing structure increases the area and mass production of graphene, improves the carrier mobility of graphene, and provides a semiconductor device with high carrier mobility. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a semiconductor device; and (2) a method for producing the graphene-containing structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic perspective view of the graphene-containing structure. First aluminum nitride layer (1) Graphene layer (3) Silicon carbide semiconductor layer (4) Graphene-containing structure (100)