• 专利标题:   Anisotropic silicon carbide conductive ceramic for electronic components, electric switch, sensor, and display, comprises substrate, graphene nano-sheet and sintering auxiliary agent dispersed in substrate.
  • 专利号:   CN113831134-A
  • 发明人:   MA N, ZHU M, HUANG Z, CHEN W, CHEN J
  • 专利权人:   SHANGHAI INST CERAMICS CHINESE ACAD SCI
  • 国际专利分类:   C04B035/565, C04B035/622, C04B035/63, C04B035/64
  • 专利详细信息:   CN113831134-A 24 Dec 2021 C04B-035/565 202234 Chinese
  • 申请详细信息:   CN113831134-A CN11255397 27 Oct 2021
  • 优先权号:   CN11255397

▎ 摘  要

NOVELTY - Anisotropic silicon carbide conductive ceramic comprises 90.5-96.4 wt.% silicon carbide (SiC) matrix, and 2-8 wt.% graphene nanosheets and balance is sintering aid dispersed in matrix. USE - Anisotropic silicon carbide conductive ceramic used in the field of electronic components, electrical switches, sensors and displays (claimed), and used for wearable series conductive ceramics, electrocardiogram (ECG) conductive ceramics, charging PIN, wire-cut conductive columns, anti-static conductive ceramics, and wave absorbing materials. ADVANTAGE - The anisotropic silicon carbide conductive ceramic has improved conductivity and anisotropy of electrical property by introducing graphene nano-sheet. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing anisotropic silicon carbide conductive ceramic, which involves: (a) weighing and adding silicon carbide powder, boron carbide and carbon powder into graphene dispersion, and mixing to obtain mixed slurry; (b) drying and sieving or spraying and granulating mixed slurry to obtain mixed powder; and (c) performing discharge plasma sintering to obtained mixed powder to obtain anisotropic silicon carbide conductive ceramic.