• 专利标题:   Preparing composite material based on reduced graphene oxide derivative/copper gallium dioxide by adding graphene oxide to autoclave with copper and gallium precursors and adopting hydrothermal method to form semiconductor material.
  • 专利号:   RO133880-A2
  • 发明人:   URSU D H, MICLAU M N, BANICA R
  • 专利权人:   INST NAT CERCDEZVOLTARE ELECTRICA ICPE
  • 国际专利分类:   C01B032/182
  • 专利详细信息:   RO133880-A2 28 Feb 2020 C01B-032/182 202027 Pages: 1 English
  • 申请详细信息:   RO133880-A2 RO000595 22 Aug 2018
  • 优先权号:   RO000595

▎ 摘  要

NOVELTY - Process for preparing composite material based on reduced graphene oxide (rGO) derivative/copper gallium dioxide involves introducing graphene oxide into a Teflon (RTM: PTFE) autoclave together with copper and gallium precursors and adopting a hydrothermal method at 250 degrees C for 6 hours to result in semiconductor materials with hexagonal plate morphology and a high degree of crystalline phase purity. USE - The process is useful for preparing composite materials based on rGO derivative/copper gallium dioxide with applications in dye-sensitized solar cells and sensors development. ADVANTAGE - The process adopts a single-step synthesis.