▎ 摘　　要

NOVELTY - The structure (100) has primary level comprising a first metal, a second metal and a third metal abutting and electrically connected in sequence with one another. The second metal has graphene. A secondary level is above the primary level. The secondary level comprise a secondary level metal and a via. The via electrically connects the third metal to the secondary level metal in a vertical orientation. The third metal comprises a length less than or equal to a critical length below which the third metal does not fail by electro migration. USE - Structure e.g. microelectronic interconnect structures for hybrid graphene-metal lines. ADVANTAGE - The advantages of the hybrid graphene metallization scheme is exploited to produce an electronic fuse (e-fuse) having improved characteristics such as improved programming reliability, lower programming currents and shorter programming times. The failure mechanism of the e-fuse structure is improved by lowering the programming current and reducing the programming times. The reliability and efficiency of the e-fuse structure is effectively improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of forming hybrid grapheme-metal lines as unit of a back-end-of-the-line (BEOL) interconnect level. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating filling the secondary level line trench with graphene. Interconnect structure (100) Dielectric (110) Capping layer (130) Dielectric layer (210) Graphene line (270)