• 专利标题:   Preparation of multi-layer graphene thin film by forming polymeric support layer on metal layer, growing on surface of graphene film, dissolving to metal layer, doping, covering to another graphene film, and covering to substrate.
  • 专利号:   CN104843694-A
  • 发明人:   CAI W, FANG X, CHEN X, WANG C
  • 专利权人:   SHANGHAI ADVANCED RES INST CHINESE ACAD
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104843694-A 19 Aug 2015 C01B-031/04 201578 Pages: 13 Chinese
  • 申请详细信息:   CN104843694-A CN10257911 20 May 2015
  • 优先权号:   CN10257911

▎ 摘  要

NOVELTY - Preparation of multi-layer graphene thin film comprises forming polymeric support layer on metal layer, growing on surface of graphene film, dissolving polymer support layer/graphene film attached to metal layer, doping by doping solution, covering polymer support layer/graphene film to another graphene film growing on surface of metal layer, dissolving polymer support layer/graphene film attached to metal layer, doping by doping solution, covering polymer support layer/graphene film to substrate, removing polymer support layer, and forming multi-layers of graphene thin film on substrate. USE - Method for preparing multi-layer graphene thin film (claimed). ADVANTAGE - The method repeatedly uses polymer support layer, and avoids polymer residue between graphene layers. DESCRIPTION OF DRAWING(S) - The drawing shows a process flow diagram of preparation of multi-layer graphene thin film (Drawing includes non-English language text).